Defects and Impurities in Silicon Materials
An Introduction to Atomic-Level Silicon Engineering
Springer Japan
ISBN 9784431558002
Standardpreis
Bibliografische Daten
eBook. PDF
2016
XV, 487 p. 292 illus., 180 illus. in color..
In englischer Sprache
Umfang: 487 S.
Verlag: Springer Japan
ISBN: 9784431558002
Weiterführende bibliografische Daten
Das Werk ist Teil der Reihe: Lecture Notes in Physics Physics and Astronomy Physics and Astronomy (R0)
Produktbeschreibung
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques.
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