Yoshida / Langouche

Defects and Impurities in Silicon Materials

An Introduction to Atomic-Level Silicon Engineering

Springer Japan

ISBN 9784431558002

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Bibliografische Daten

eBook. PDF

2016

XV, 487 p. 292 illus., 180 illus. in color..

In englischer Sprache

Umfang: 487 S.

Verlag: Springer Japan

ISBN: 9784431558002

Weiterführende bibliografische Daten

Produktbeschreibung

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques.

The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Autorinnen und Autoren

Produktsicherheit

Hersteller

Libri GmbH

Europaallee 1
36244 Bad Hersfeld, DE

gpsr@libri.de

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