Field-Effect Transistors Technology
From Sustainability to Next-Generation VLSI Design
Taylor & Francis Ltd
ISBN 978-1-03-287607-8
Standardpreis
Bibliografische Daten
Buch. Hardcover
2025
194 s/w-Abbildungen, 42 s/w-Fotos, 152 s/w-Zeichnungen, 16 s/w-Tabelle.
In englischer Sprache
Umfang: 466 S.
Format (B x L): 15.6 x 23.4 cm
Verlag: Taylor & Francis Ltd
ISBN: 978-1-03-287607-8
Produktbeschreibung
Features
- Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.
- Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.
- Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.
- Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.
The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.
Autorinnen und Autoren
Produktsicherheit
Hersteller
Libri GmbH
Europaallee 1
36244 Bad Hersfeld, DE
gpsr@libri.de
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