BÜCHER VERSANDKOSTENFREI INNERHALB DEUTSCHLANDS
eBook
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Springer Nature Switzerland
ISBN 978-3-319-77994-2
Standardpreis
Bibliografische Daten
eBook. PDF
2018
XIII, 232 p. 183 illus., 165 illus. in color..
In englischer Sprache
Umfang: 232 S.
Verlag: Springer Nature Switzerland
ISBN: 978-3-319-77994-2
Weiterführende bibliografische Daten
Das Werk ist Teil der Reihe: Integrated Circuits and Systems
Produktbeschreibung
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
- Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
- Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
- Enables design of smaller, cheaper and more efficient power supplies.
Autorinnen und Autoren
Produktsicherheit
Hersteller
Springer-Verlag GmbH
Tiergartenstr. 17
69121 Heidelberg, DE
ProductSafety@springernature.com
Rezensionen
