Gao / Zhang

Silicon Carbide Power Devices

Characteristics, Test and Application

Springer

ISBN 9789819634798

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Bibliografische Daten

Fachbuch

Buch. Hardcover

2025

149 s/w-Abbildungen, 457 Farbabbildungen.

In englischer Sprache

Umfang: xxxviii, 640 S.

Format (B x L): 15,5 x 23,5 cm

Verlag: Springer

ISBN: 9789819634798

Weiterführende bibliografische Daten

Das Werk ist Teil der Reihe: CPSS Power Electronics Series

Produktbeschreibung

This book provides comprehensive technical information on SiC power devices from multiple perspectives, covering topics from device research and development to system applications. Chapters 1 to 4 focus on the characteristics of SiC devices, initially outlining the limitations of Si power devices and explaining why SiC has superior properties at the material level. It then offers updates on the latest developments in the SiC industry chain and products innovations, along with a detailed discussion of the characteristics and specifications of SiC Diodes and MOSFETs. Chapters 5 and 6 zoom in on SiC device testing and evaluation techniques, including CP testing, FT testing, system application testing, reliability assessment, failure analysis, and double-pulse testing. Chapters 7 to 12 focus on SiC device application technology, addressing common challenges in real applications and providing solutions. This includes voltage spikes during turn-off, crosstalk, common-mode current, common-source inductance, and driver circuits, concluding with case studies of SiC device applications in various scenarios. The book can serve as a textbook for higher education and vocational training, as well as a reference material for engineers in the power semiconductor and electrical electronics industries. To make the book genuinely helpful for readers, the authors have invested significant effort in content and data selection. First, the chosen technical points come from real-world requirements in device R&D and applications. Second, the book emphasizes practicality while integrating cutting-edge developments, detailing research outcomes with industrial potential. Third, the book offers a wealth of data and waveforms, most of which are actual measurements, to bridge the gap between theory and practice. Lastly, extensive further reading materials are provided at the end of each chapter for broader and deeper exploration.

Autorinnen und Autoren

Kundeninformationen

Introduces the latest development status of silicon carbide device industry in detail Analyzes the technical challenges in the application of SiC devices with solutions proposed Provides large number of high practical value test data and waveforms

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