Silicon Carbide Nanostructures
Fabrication, Structure, and Properties
2., Second Edition 2025
Springer
ISBN 978-3-032-10985-9
Standardpreis
Bibliografische Daten
Fachbuch
Buch. Hardcover
2., Second Edition 2025. 2026
356 s/w-Abbildungen, 68 Farbabbildungen.
Umfang: xiii, 529 S.
Format (B x L): 15,5 x 23,5 cm
Verlag: Springer
ISBN: 978-3-032-10985-9
Weiterführende bibliografische Daten
Das Werk ist Teil der Reihe: Engineering Materials and Processes
Produktbeschreibung
SiC nanostructures exhibit fascinating and industrially important properties, including diverse and transformable polytypes, complex and intriguing surface structures including fruitful surface color centers across the entire visible spectral region, and excellent biocompatibility. These properties make them ideal for use in nanoelectronics, photonics, electron field emission, sensing, quantum information, green energy conversion and storage, composite nanostructures, biomedical engineering, and medicine. SiC is also an excellent template for epitaxially growing high-quality graphene and other semiconductors.
This second edition of the book is significantly expanded and updated to reflect those newest advances as well as some important correlated points missed in the first edition, emphasizing the strong correlations between structures and properties. Newly incorporated and highly expanded topics include point defects and spin dynamics, impurities and luminescence, origins of presolar SiC grains, unique characteristics of SiC quantum dots, applications of SiC nanowires in microwave absorption and thermal management, two-dimensional SiC honeycomb-structured monolayers, etc. It is an essential and self-contained reference for materials scientists, physicists, chemists, and engineers working in microelectronics, optoelectronics, microengineering, and biomedical engineering. Graduate students and researchers new to the field will also find this book a valuable resource.
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