Erschienen: 31.03.2016 Abbildung von Yoshida / Langouche | Defects and Impurities in Silicon Materials | 1st ed. 2015 | 2016 | An Introduction to Atomic-Leve... | 916

Yoshida / Langouche

Defects and Impurities in Silicon Materials

An Introduction to Atomic-Level Silicon Engineering

1st ed. 2015 2016. Buch. xv, 487 S. 112 s/w-Abbildungen, 180 Farbabbildungen, 20 s/w-Tabelle, Bibliographien. Softcover

Springer. ISBN 9784431557999

Format (B x L): 15,5 x 23,5 cm

Gewicht: 887 g

In englischer Sprache

Das Werk ist Teil der Reihe: Lecture Notes in Physics; 916


This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years thanks to newly developed experimental methods, first principle theories and computer simulation techniques. This book is aimed at young researchers, scientists and technicians in related industries. The main purposes are to provide readers with: 1) the basic physics behind defects in silicon materials, 2) the atomistic modelings as well as the characterization techniques related to defects and impurities in silicon materials, and 3)an overview of the wide range of the research fields.


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