Erschienen: 01.12.2008 Abbildung von Seebauer / Kratzer | Charged Semiconductor Defects | 2nd Printing. | 2008 | Structure, Thermodynamics and ...

Seebauer / Kratzer

Charged Semiconductor Defects

Structure, Thermodynamics and Diffusion

lieferbar ca. 10 Tage als Sonderdruck ohne Rückgaberecht

ca. 213,99 €

inkl. Mwst.

2nd Printing. 2008. Buch. xiv, 298 S. 30 s/w-Tabelle, Bibliographien. Hardcover

Springer. ISBN 978-1-84882-058-6

Format (B x L): 15,5 x 23,5 cm

Gewicht: 625 g

In englischer Sprache

Das Werk ist Teil der Reihe: Engineering Materials and Processes

Produktbeschreibung

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Autoren

  • Dieses Set enthält folgende Produkte:
      Auch in folgendem Set erhältlich:
      • nach oben

        Ihre Daten werden geladen ...