Erschienen: 12.04.2018 Abbildung von Mrozek | Multi-run Memory Tests for Pattern Sensitive Faults | 1st ed. 2019 | 2018

Mrozek

Multi-run Memory Tests for Pattern Sensitive Faults

1st ed. 2019 2018. Buch. x, 135 S. 34 s/w-Abbildungen, 50 Farbtabellen, Bibliographien. Hardcover

Springer. ISBN 978-3-319-91203-5

Format (B x L): 15,5 x 23,5 cm

Gewicht: 388 g

In englischer Sprache

Produktbeschreibung

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

- Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;

- Presents practical algorithms for design and implementation of efficient multi-run tests;

- Demonstrates methods verified by analytical and experimental investigations.

Autoren

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