Erschienen: 22.04.2018 Abbildung von Meneghini / Meneghesso / Zanoni | Power GaN Devices | Softcover reprint of the original 1st ed. 2017 | 2018

Meneghini / Meneghesso / Zanoni

Power GaN Devices

Materials, Applications and Reliability

lieferbar ca. 10 Tage als Sonderdruck ohne Rückgaberecht

160,49 €

inkl. Mwst.

Softcover reprint of the original 1st ed. 2017 2018. Buch. x, 380 S. 40 s/w-Abbildungen, 266 Farbabbildungen, 50 Farbtabellen, Bibliographien. Softcover

Springer. ISBN 978-3-319-82756-8

Format (B x L): 15,5 x 23,5 cm

Gewicht: 6626 g

In englischer Sprache

Das Werk ist Teil der Reihe: Power Electronics and Power Systems

Produktbeschreibung

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption.

The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach.



This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Gesamtwerk

Die 8. Auflage ist wieder auf sechs Bände angelegt. Darin finden sich übersichtlich und in systematischer Gliederung Vertragsmuster aus der Feder erfahrener Experten. Jedem dieser Muster folgen Anmerkungen, mit denen der dem Vertragsentwurf zu Grunde liegende Sachverhalt und die Gründe für die Wahl des spezifischen Formulars erläutert werden.

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