Erschienen: 19.11.2014 Abbildung von Hong / Auciello / Wouters | Emerging Non-Volatile Memories | 2014

Hong / Auciello / Wouters

Emerging Non-Volatile Memories

2014. Buch. xii, 273 S. 44 s/w-Abbildungen, 112 Farbabbildungen, 32 s/w-Tabelle, Bibliographien. Hardcover

Springer. ISBN 978-1-4899-7536-2

Format (B x L): 15,5 x 23,5 cm

Gewicht: 6083 g

In englischer Sprache

Produktbeschreibung

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.

This book also:

Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.

Provides an overview of non-volatile memory fundamentals.

Broadens readers’ understanding of future trends in non-volatile memories.

Autoren

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