Ankündigung Erscheint vsl. Mai 2020 Abbildung von Higashiwaki / Fujita | Gallium Oxide | 1st ed. 2020 | 2020 | Materials Properties, Crystal ... | 293

Higashiwaki / Fujita

Gallium Oxide

Materials Properties, Crystal Growth, and Devices

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149,79 €

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1st ed. 2020 2020. Buch. xxviii, 764 S. 81 s/w-Abbildungen, 392 Farbabbildungen, 100 Farbtabellen, Bibliographien. Hardcover

Springer. ISBN 978-3-030-37152-4

Format (B x L): 15,5 x 23,5 cm

In englischer Sprache

Das Werk ist Teil der Reihe: Springer Series in Materials Science; 293


This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.


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