Erschienen: 27.08.2016 Abbildung von Han / Wang | Toward Quantum FinFET | Softcover reprint of the original 1st ed. 2013 | 2016 | 17

Han / Wang

Toward Quantum FinFET

lieferbar ca. 10 Tage als Sonderdruck ohne Rückgaberecht

139,99 €

inkl. Mwst.

Softcover reprint of the original 1st ed. 2013 2016. Buch. xi, 363 S. 67 s/w-Abbildungen, 168 Farbabbildungen, 20 s/w-Tabelle, Bibliographien. Softcover

Springer. ISBN 978-3-319-34914-5

Format (B x L): 15,5 x 23,5 cm

Gewicht: 575 g

In englischer Sprache

Produktbeschreibung

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.
- Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect
- Provides the keys to understanding the emerging area of the quantum FinFET
- Written by leading experts in each research area
- Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

Gesamtwerk

Die 8. Auflage ist wieder auf sechs Bände angelegt. Darin finden sich übersichtlich und in systematischer Gliederung Vertragsmuster aus der Feder erfahrener Experten. Jedem dieser Muster folgen Anmerkungen, mit denen der dem Vertragsentwurf zu Grunde liegende Sachverhalt und die Gründe für die Wahl des spezifischen Formulars erläutert werden.

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