Erschienen: 11.07.2018 Abbildung von Godejohann / Ambacher | GaN-based High Electron Mobility Transistors with high Al-content barriers. | 1. Auflage | 2018 | 36 | beck-shop.de

Godejohann / Ambacher

GaN-based High Electron Mobility Transistors with high Al-content barriers.

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Buch. Softcover

2018

156 S.

In englischer Sprache

Fraunhofer Verlag. ISBN 978-3-8396-1340-5

Format (B x L): 14,8 x 21 cm

Das Werk ist Teil der Reihe: Science for systems; 36

Produktbeschreibung

In this work Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMT) with ultra-thin AlN barriers are developed in order to realize high-frequency transistors and power amplifiers for millimeter-wave (mmW) applications. Epitaxy and fabrication of the AlN/GaN heterostructure at the beginning of the process chain form the basis for the performance of the devices. Highly-strained and extremely thin layers complicate growth, characterization and processing of the corresponding structures.
HEMT structures, grown by plasma-assisted molecular beam epitaxy as well as metal-organic chemical vapor deposition, are systematically compared. Structural and electrical differences resulting from the substantially different epitaxial techniques could be identified and analyzed in detail.br>Process development was performed for the epitaxially optimized AlN/GaN HEMT structures at the end. Successful fabrication of devices with ultra-thin barrier layers could be demonstrated and MMICs (Monolithic Microwave Integrated Circuit) could be processed on the developed epitaxy structures for frequencies in the range of 70 - 100 GHz.

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