Erschienen: 25.02.2012 Abbildung von Chu / Sher | Device Physics of Narrow Gap Semiconductors | 2012

Chu / Sher

Device Physics of Narrow Gap Semiconductors

lieferbar ca. 10 Tage als Sonderdruck ohne Rückgaberecht

ca. 199,98 €

inkl. Mwst.

2012. Buch. xiv, 506 S. 309 s/w-Abbildungen, 17 s/w-Tabelle, Bibliographien. Softcover

Springer. ISBN 978-1-4614-2480-2

Format (B x L): 15,5 x 23,5 cm

Gewicht: 789 g

In englischer Sprache

Das Werk ist Teil der Reihe: Microdevices

Produktbeschreibung

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

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