Erschienen: 09.12.2021 Abbildung von Ambacher / John | Integrated Sub-Millimeter-Wave High-Power Amplifiers in Advanced InGaAs-Channel HEMT Technology. | 1. Auflage | 2021 | 53 | beck-shop.de

Ambacher / John

Integrated Sub-Millimeter-Wave High-Power Amplifiers in Advanced InGaAs-Channel HEMT Technology.

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Fachbuch

Buch. Softcover

2021

160 S.

In englischer Sprache

Fraunhofer Verlag. ISBN 978-3-8396-1762-5

Format (B x L): 14,8 x 21 cm

Das Werk ist Teil der Reihe: Science for systems; 53

Produktbeschreibung

Driven by the large absolute bandwidths that are available at the sub-mm-wave frequency range around 300 GHz, wireless high-data-rate communication systems and high-resolution imaging applications are being extensively investigated in recent years. Due to their superior characteristics in terms of noise figure and cutoff frequencies, InGaAs-channel HEMT devices have proven to be a key technology to implement the required active front-end MMICs for these wireless THz systems, enabling ultra-high bandwidths and state-of-the-art noise performance. This work describes the modeling, design, and characterization of 300-GHz HEMT-based power amplifier cells and demonstrates the implementation of highly compact amplifier MMICs and broadband waveguide modules. These amplifiers are key components for the implementation of high-performance chipsets for wireless THz systems, providing high output power for the utilization of next-generation communication and imaging applications. A unique amplifier topology based on multi-finger cascode and common-source devices is developed and evaluated, demonstrating more than 20-mW measured output power at the sub-mm-wave frequency range around 300 GHz.

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